The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.

通过热释电极化温度扫描法分离俘获电流峰贡献的局域能级峰。

Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

重点研化PMOS器件的高场火效应和氧化层陷阱电子的陷阱机制。