A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented.
摘要提出了一种基于二维器件拟的深亚微米工艺外延衬底的电阻宏。
A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented.
摘要提出了一种基于二维器件拟的深亚微米工艺外延衬底的电阻宏。
The hydrated silicon dioxide with three layers structure of micron-submicron-millimicron was observed through TEM.
过电实验,水合二氧化硅具有微米亚微米纳米三次结构。
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