95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技
的快速发展，可量产的CMOS技，
征线宽也由0.13um 进入了90nm甚至65nm
以下。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技的快速发展，可量产的CMOS技，征线宽也由0.13um 进入了90nm甚至65nm以下。
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